fjp5555 ? npn silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com fjp5555 rev. b0 1 january 2010 fjp5555 npn silicon transistor features ? high voltage switch mode application ? fast speed switching ? wide safe operating area ? suitable for electronic ballast application absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted symbol parameter value units v cbo collector-base voltage 1050 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 14 v i c collector current (dc) 5 a i cp collector current (pulse) 10 a p c collector dissipation 75 w t j junction temperature 150 c t stg storage temperature - 55 to +150 c symbol parameter conditions min. typ. max. units bv cbo collector-base voltage i c =500 a, i e =0 1050 v bv ceo collector-emitter voltage i c =5ma, i b = 0 400 v bv ebo emitter-base voltage i e =500 a, i c =0 14 v h fe *dc current gain v ce =5v, i c =10ma v ce =3v, i c =0.8a 10 20 40 v ce (sat) collector-emitter saturation voltage i c =1a, i b =0.2a i c =3.5a, i b =1.0a 0.5 1.5 v v v be (sat) base-emitter saturation voltage i c =3.5a, i b =1.0a 1.2 v c ob output capacitance v cb =10v, f=1mhz 45 pf t on turn on time v cc =125v, i c =0.5a i b1 =45ma, i b2 =0.5a r l =250 1.0 s t stg storage time 1.2 s t f fall time 0.3 s t on turn on time v cc =250v, i c =2.5a i b1 =0.5a, i b2 =1.0a r l =100 2.0 s t stg storage time 2.5 s t f fall time 0.3 s eas avalanche energy l= 2mh 6 mj 1.base 2.collector 3.emitter 1 to-220 * pulse test: pulse width 300 s, duty cycle 2%
fjp5555 ? npn silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com fjp5555 rev. b0 2 typical characteristics figure 1. static characteristics figure 2. dc current gain figure 3. saturation voltage figure 4. saturation voltage figure 5. resistive load switching figure 6. resistive load switching 0123456789 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i b = 600ma i b = 200ma i b = 100ma i c [a], collector current v ce [v], collector-emitter voltage 1e-3 0.01 0.1 1 10 1 10 100 v ce = 5v ta = 25 o c ta = 75 o c ta = 125 o c ta = - 25 o c h fe , dc current gain i c [a], collector current 0.01 0.1 1 10 0.01 0.1 1 10 ta = 25 o c ta = 75 o c i c = 5 i b ta = 125 o c ta = - 25 o c v ce (sat) [v], saturation voltage i c [a], collector current 0.01 0.1 1 10 0.01 0.1 1 10 ta = 125 o c ta = 75 o c ta = 25 o c ta = - 25 o c i c = 5 i b v be (sat) [v], saturation voltage i c [a], collector current 0.1 1 0.01 0.1 1 t f t stg v cc =125v i b1 =45ma, i b2 =0.5a t stg & t f [us], switching time i c [a], collector current 0.1 1 10 0.01 0.1 1 t f t stg v cc =250v i b1 =0.5a, i b2 =1.0a t stg & t f [us], switching time i c [a], collector current
fjp5555 ? npn silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com fjp5555 rev. b0 3 typical characteristics (continued) figure 7. reverse biased safe operating area figure 8. power derating figure 9. forward biased safe operating area 10 100 1000 1 10 v cc =50v, l=1mh i b1 =3a, r b2 =0 i c [a], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 100 p c [w], power dissipation tc[ o c], case temperature 1 10 100 1000 0.01 0.1 1 10 100 10ms 100ms dc i cp (max) i c (max) i c [a], collector current v ce [v], collector-emitter voltage tc=25 o c single pulse
fjp5555 ? npn silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com fjp5555 rev. b0 4 physical dimensions to-220 dimensions in millimeters
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